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STZ5.6N
Diodes
Zener Diode Array
STZ5.6N
!Applications Constant voltage control For the ESD measure of a signal line !External dimensions (Units : mm)
1.1+0.2 -0.1
2.90.2 1.90.2 0.95 0.95
0.80.1
0.4 +0.1 -0.05
0.15+0.1 -0.06
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59
!Absolute maximum ratings (Ta=25C)
Parameter Power dissipation Junction temperature Storage temperature
Total of 2 elements
Symbol P Tj Tstg
Limits 200 150 -55~+150
Unit mW C C
!Electrical characteristics (Ta=25C)
Parameter Zener voltage Reverse current Operating resistance Rising operating resistance Symbol VZ IR ZZ ZZK Min. 5.31 - - - Typ. - - - - Max. 5.92 1.00 60 200 Unit V A IZ=5mA VR=2.5V IZ=5mA IZ=0.5mA Conditions
Capacitance between terminals
CT
-
12
-
pF
f=1MHZ, VR=5V
0.3~0.6
Week manufactured
6F
!Features 1) Designed for mounting on small surface areas 2) High reliability 3) Composite type with two anode/cathode elements
2.80.2
+0.2 1.6 -0.1
0~0.1
STZ5.6N
Diodes
!Others
Item Standard1 IEC1000-4-2 Charge/discharge capacitance : 200pF10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400 10% Discharge resistance : 330 5 repetitions No spark or smoke emitted : 25kV No element destruction No malfunction : 20kV : 8kV 10 repetitions No malfunction Contact Suspended : 8kV : 15kV
Judgment contents
!Electrical characteristic curves (Ta=25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
10m
100
POWER DISSIPATION : Pd (mW)
300
ZENER CURRENT : Iz (A)
1m
200
f=1MHz 10
100
100
10
4.0
5.0
6.0
1
5 REVERSE VOLTAGE : VR (V)
10
0 0
25
50
100
150
ZENER VOLTAGE : Vz (V)
AMBIENT TEMPERATURE : Ta (C)
Fig.1 Zener characteristics
Fig.2 Capacitance between terminals characteristic
Fig.3 Derating curve

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